TYPE | DESCRIPTION |
---|
Number of Pins | 8 Pin |
Case/Package | SOT-1118 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.032 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 1.17 W |
Threshold Voltage | 650 mV |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 4A |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
The PMDPB30XN is a dual N-channel enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
● Very fast switching characteristics
● Exposed drain pad for excellent thermal conduction
NXP
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