| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 150 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Rating | 0.25 W |
| Number of Positions | 3 Position |
| Power Dissipation | 250 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| hFE Min | 300 @100mA, 5V |
| hFE Max | 300 @1mA, 5V |
| Input Power (Max) | 250 mW |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
The PMMT591A is a PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. It is suitable for use with the battery powered units where high current and low power consumption are important.
● High voltage
● High current
● Low collector-emitter saturation voltage VCEsat ensures reduced power consumption
● NPN complement is PMMT491A
● 9B Marking code
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Small Signal Bipolar Transistor
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