TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | TSOP-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.027 Ω |
Power Dissipation | 540 mW |
Drain to Source Voltage (Vds) | 20 V |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 2340pF @10V(Vds) |
Input Power (Max) | 540 mW |
Fall Time | 27 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 540mW (Ta), 6.25W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Discontinued at Digi-Key |
Packaging | Tape & Reel (TR) |
Size-Length | 3.1 mm |
Size-Width | 1.7 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMN27UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.
● 1.8V RDS (ON) rated
● Very fast switching
● -55 to 150°C Junction temperature range
Nexperia
15 Pages / 0.79 MByte
Nexperia
206 Pages / 0.21 MByte
Nexperia
Transistor: P-MOSFET; unipolar; -20V; -5.7A; 540mW; SOT457
Nexperia
MOSFET P-CH 20V 5.7A 6TSOP
NXP
MOSFET Transistor, P Channel, -5.7A, -20V, 0.027Ω, -4.5V, -1V
Nexperia
MOSFET, P CH, 20V, 5.7A, SOT457; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.7A; Drain Source...
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.