| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | SOT-1220 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.08 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.3 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 80 V |
| Continuous Drain Current (Ids) | 2.8A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
The PMPB95ENEA is a N-channel enhancement-mode FET in a leadless medium power surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
● Small and leadless ultra thin SMD plastic package
● Exposed drain pad for excellent thermal conduction
● Tin-plated 100% solderable side pads for optical solder inspection
● AEC-Q101 qualified
● Low threshold voltage
● -55 to 150°C Junction temperature range
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