| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Polarity | N-Channel |
| Power Dissipation | 510 mW |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 5.8A |
| Input Capacitance (Ciss) | 670pF @10V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 4170 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
The PMV16UN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
● Low threshold voltage
● Very fast switching
● -55 to 150°C Junction temperature range
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