| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.067 Ω |
| Power Dissipation | 0.89 W |
| Threshold Voltage | 1.25 V |
| Input Capacitance | 618 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 618pF @10V(Vds) |
| Input Power (Max) | 480 mW |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 480mW (Ta), 6.25W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMV65XPEA is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.
● Very fast switching
● 890mW Enhanced power dissipation capability Ptot
● 2kV HBM ESD protection
● AEC-Q101 qualified
● -55 to 150°C Junction temperature range
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