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IXTQ200N10T
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IXTQ200N10T Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-3-3
Description:TO-3P N-CH 100V 200A
Documentation:IXTQ200N10T Datasheet (5 Pages)
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IXTQ200N10T Datasheet PDF (5 Pages)
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IXTQ200N10T Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Case/PackageTO-3-3
PolarityN-CH
Power Dissipation550W (Tc)
Drain to Source Voltage (Vds)100 V
Continuous Drain Current (Ids)200A
Input Capacitance (Ciss)9400pF @25V(Vds)
Power Dissipation (Max)550W (Tc)
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IXTQ200N10T Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
Operating Temperature-55℃ ~ 175℃ (TJ)
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IXTQ200N10T Documents

IXTQ200N10T Datasheet
IXYS Semiconductor
5 Pages / 0.17 MByte
IXTQ200N10T Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.16 MByte

IXTQ200N10 Documents

IXTQ200N10T Datasheet PDF
IXYS Semiconductor
TO-3P N-CH 100V 200A
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