| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | DFN1010D-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Power Dissipation | 400 mW |
| Input Capacitance | 309 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 309pF @15V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400mW (Ta), 8.3W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMXB120EPE is a P-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.
● Leadless ultra small and ultra thin SMD plastic package
● Exposed drain pad for excellent thermal conduction
● 1kV ESD protection HBM
● 100mR Drain-source ON-state resistance RDS (ON)
● -55 to 150°C Junction temperature range
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