| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-883 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.67 Ω |
| Polarity | P-Channel |
| Power Dissipation | 360 mW |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 0.68A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.7 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 1.05 mm |
| Size-Width | 0.65 mm |
| Size-Height | 0.36 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The PMZB670UPE is a P-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, high-side load-switch and switching circuit applications.
● Very fast switching
● ESD protection up to 2kV
● Low threshold voltage
● Ultra-thin package profile of 0.37mm
● -55 to 150°C Junction temperature range
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