PTF080101S Datasheet PDF - Infineon

Description

●The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

●Features

●• Broadband internal matching

●• Typical EDGE performance

●  - Average output power = 4.0 W

●  - Gain = 19 dB

●  - Efficiency = 31%

●• Typical CW performance

●  - Output power at P–1dB = 13 W

●  - Gain = 18 dB

●\- Efficiency = 55%

●• Integrated ESD protection: Human Body Model, Class 1 (minimum)

●• Excellent thermal stability

●• Low HCI drift

●• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power