PTF080101M Datasheet PDF - Infineon

Description

●The PTF080101M is an unmatched 10-watt GOLDMOS® FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

●Features

●• Typical EDGE performance

●  - Average output power = 5.0 W

●  - Gain = 19 dB

●  - Efficiency = 37%

●  - EVM = 2.0%

●• Typical CW performance

●  - Output Power at P–1dB = 12.5 W

●  - Gain = 18 dB

●  - Efficiency = 50%

●• Integrated ESD protection: Human Body Model Class 1 (minimum)

●• Excellent thermal stability

●• Low HCI drift

●• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power

●• Pb-free and RoHS compliant