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PTF080101S V1
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PTF080101S V1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:Transistors
Case Package:H-32259-2
Description:IC FET RF LDMOS 10W H-32259-2
Documentation:PTF080101S V1 Datasheet (9 Pages)Package Outline Dimension on2 Page8 Page
Part Numbering System on2 Page
PTF080101S V1 User Reference Manual Guide (3 Pages)
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PTF080101S V1 Datasheet PDF (9 Pages)
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PTF080101S V1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Frequency960 MHz
Number of Pins3 Pin
Voltage Rating (DC)65.0 V
Current Rating1 µA
Case/PackageH-32259-2
Drain to Source Voltage (Vds)65.0 V
Continuous Drain Current (Ids)1.00 µA
Output Power10 W
Gain18.5 dB
Test Current150 mA
Operating Temperature (Max)200 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)58000 mW
Voltage Rating65 V
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PTF080101S V1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTape
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PTF080101S V1 Documents

PTF080101S V1 Datasheet
Infineon
9 Pages / 0.16 MByte
PTF080101S V1 User Reference Manual Guide
Infineon
3 Pages / 0.36 MByte
PTF080101S V1 Other Datasheet PDF
Infineon
1 Pages / 0.03 MByte

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PTF080101S V1 Datasheet PDF
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IC FET RF LDMOS 10W H-32259-2
PTF080101M Datasheet PDF
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High Power RF LDMOS Field Effect Transistor 10W, 450 – 960MHz
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