| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-163 |
| Drain to Source Resistance (on) (Rds) | 0.26 Ω |
| Polarity | N+P |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 1.5A |
| TYPE | DESCRIPTION |
|---|
| Minimum Packing Quantity | 3000 |
Small switching Features The QS6M4 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. Pch Trench MOSFET and Nch Trench MOSFET have a low on-state resistance with a fast switching. Applications Load switch, inverter
ROHM Semiconductor
6 Pages / 0.07 MByte
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