| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Supply Voltage (DC) | 5.00 V |
| Voltage Rating (DC) | 30.0 V |
| Operating Voltage | 5.00 V |
| Case/Package | T-1 |
| Breakdown Voltage | 30.0 V |
| Number of Positions | 2 Position |
| Wavelength | 880 nm |
| Viewing Angle | 24° |
| Peak Wavelength | 880 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Rise Time | 7000 ns |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Input Power (Max) | 100 mW |
| Fall Time | 7 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 6.1 mm |
| Size-Width | 6.1 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The QSD123 is a NPN Silicon Infrared Phototransistor is suitable for QED12X/QED22X/QED23X notched emitter. It has 24° narrow reception angle and a daylight filter. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
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