| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6 Ω |
| Polarity | N-Channel |
| Power Dissipation | 63 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 1500 V |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 939pF @25V(Vds) |
| Input Power (Max) | 63 W |
| Fall Time | 61 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 63W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.7 mm |
| Size-Width | 5.7 mm |
| Size-Height | 26.7 mm |
| Operating Temperature | 150℃ (TJ) |
The STFW3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company"s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
● 100% Avalanche tested
● High speed switching
● Creepage distance path is 5.4mm
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