| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Operating Voltage | 5.00 V |
| Case/Package | T-1 |
| Output Voltage | ≤30.0 V |
| Breakdown Voltage | 30.0 V |
| Number of Positions | 2 Position |
| Wavelength | 880 nm |
| Viewing Angle | 24° |
| Peak Wavelength | 880 nm |
| Polarity | NPN |
| Power Dissipation | 0.1 W |
| Power Consumption | 100 mW |
| Rise Time | 7000 ns |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Input Power (Max) | 100 mW |
| Fall Time | 7 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Height | 8.77 mm |
| Operating Temperature | -40℃ ~ 100℃ (TA) |
The QSD124 is a Plastic Silicon Infrared Phototransistor encapsulated in an infrared transparent black package. This product is general usage and suitable for many different applications.
● NPN silicon phototransistor
● Notched emitter - QED12X/QED22X/QED23X
● 24°C Narrow reception angle
● Daylight filter
● High sensitivity
Fairchild
4 Pages / 1.99 MByte
Fairchild
6 Pages / 0.31 MByte
Fairchild
1 Pages / 0.2 MByte
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