R6011KND3TL1 Datasheet PDF - ROHM Semiconductor

Manufacturer:	ROHM Semiconductor
Case Package:	TO-252
Description:	Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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R6011KND3TL1 Specifications

TYPE	DESCRIPTION
Number of Pins	3 Pin
Case/Package	TO-252
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.34 Ω
Power Dissipation	124 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	600 V
Rise Time	25 ns
Input Capacitance (Ciss)	740pF @25V(Vds)
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	124000 mW

TYPE	DESCRIPTION
Packaging	Tape & Reel (TR)

ROHM Semiconductor

16 Pages / 1.46 MByte

ROHM Semiconductor

Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R

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