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R6030ENZ1C9
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R6030ENZ1C9 Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:High Voltage MOS
Case Package:TO-247-3
Description:ROHM R6030ENZ1C9 Power MOSFET, N Channel, 30A, 600V, 0.115Ω, 10V, 4V New
Documentation:R6030ENZ1C9 Datasheet (13 Pages)
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R6030ENZ1C9 Datasheet PDF (13 Pages)
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R6030ENZ1C9 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.115 Ω
PolarityN-Channel
Power Dissipation120 W
Threshold Voltage4 V
Drain to Source Voltage (Vds)600 V
Rise Time55 ns
Input Capacitance (Ciss)2100pF @25V(Vds)
Fall Time60 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)120W (Tc)
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R6030ENZ1C9 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingBulk
Operating Temperature150℃ (TJ)
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R6030ENZ1C9 Documents

R6030ENZ1C9 Datasheet
ROHM Semiconductor
13 Pages / 0.89 MByte

R6030ENZ1 Documents

R6030ENZ1C9 Datasheet PDF
ROHM Semiconductor
ROHM R6030ENZ1C9 Power MOSFET, N Channel, 30A, 600V, 0.115Ω, 10V, 4V New
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