Part Datasheet Search > IGBTs > Toshiba > GT60M303(Q) Datasheet PDF
GT60M303(Q)
Price from AiPCBA

GT60M303(Q) Datasheet PDF - Toshiba

Manufacturer:Toshiba
Category:IGBTs
Case Package:TO-3
Description:Trans IGBT Chip N-CH 900V 60A 170000mW 3Pin(3+Tab) TO-3PL
Documentation:GT60M303(Q) Datasheet (6 Pages)
Pictures:
Symbol
Footprint
Pinout
Product Pictures
GT60M303(Q) Datasheet PDF (6 Pages)
View Datasheet
Click page to view the detail

GT60M303(Q) Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-3
Breakdown Voltage (Collector to Emitter)900 V
Input Power (Max)170 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)170000 mW
View Datasheet >

GT60M303(Q) Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended
PackagingBulk
View Datasheet >

GT60M303(Q) Documents

GT60M303(Q) Datasheet
Toshiba
6 Pages / 0.42 MByte

GT60M303 Documents

GT60M303 Datasheet PDF
Toshiba
Trans IGBT Chip N-CH 900V 60A 3Pin(3+Tab) TO-3P(LH)
GT60M303(Q) Datasheet PDF
Toshiba
Trans IGBT Chip N-CH 900V 60A 170000mW 3Pin(3+Tab) TO-3PL
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

 Privacy Statementsupport@adatasheet.com
CopyRight © 2015-2024 ADatasheet