R8008ANX Datasheet PDF - ROHM Semiconductor

Manufacturer:	ROHM Semiconductor
Category:	MOSFETs
Case Package:	TO-220-3
Description:	TO-220FM N 800V 8A 0.79Ω
Documentation:	R8008ANX Datasheet (6 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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R8008ANX Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.79 Ω
Polarity	N-Channel
Power Dissipation	66 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	8A
Rise Time	50 ns
Input Capacitance (Ciss)	1080pF @25V(Vds)
Input Power (Max)	50 W
Fall Time	30 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	50W (Tc)