| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-251 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
●Features
●• 15A, 60V
●• rDS(ON) = 0.150Ω
●• Temperature Compensating PSPICE® Model
●• Peak Current vs Pulse Width Curve
●• UIS Rating Curve
●• Related Literature
● - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Intersil
8 Pages / 0.08 MByte
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15A, 60V, 0.15Ω, P-Channel Power MOSFETs
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15A, 60V, 0.15Ω, P-Channel Power MOSFETs
Fairchild
Trans MOSFET P-CH Si 50V 15A 3Pin(2+Tab) DPAK
Fairchild
Trans MOSFET P-CH Si 50V 15A 3Pin(3+Tab) TO-251
Intersil
15A, 50V, 0.15Ω, P-Channel Power MOSFETs
Intersil
15A/ 50V/ 0.15Ω/ P-Channel Power MOSFETs
Harris
Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ON Semiconductor
Trans MOSFET P-CH Si 50V 15A 3-Pin(2+Tab) DPAK
Intersil
15A, 50V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
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