TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 6.00 A |
Case/Package | TO-252-3 |
Output Current | ≤6.00 A |
Forward Voltage | 2.1V @6A |
Polarity | Standard |
Thermal Resistance | 3℃/W (RθJC) |
Reverse recovery time | 35 ns |
Forward Current | 6 A |
Max Forward Surge Current (Ifsm) | 60 A |
Maximum Forward Voltage (Max) | 2.1 V |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -65 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Width | 6.22 mm |
Operating Temperature | -65℃ ~ 175℃ |
The RHRD660S9A is a hyper-fast Diode with soft recovery characteristics (trr <30ns). It has half the recovery time of ultra-fast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as free-wheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyper-fast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
● Avalanche energy rated
● Planar construction
● AEC-Q101 qualified
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