| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Power Dissipation | 500000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Capacitance (Cies) | 4.86nF @25V |
| Input Power (Max) | 500 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this IXXN100N60B3H1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration. This device utilizes xpt technology.
IXYS Semiconductor
7 Pages / 0.2 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 440A 500000mW 4Pin SOT-227B
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