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IXFH30N60P
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IXFH30N60P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-247-3
Description:Single N-Channel 600V 500W 82NC Through Hole Power Mosfet - TO-247
Documentation:IXFH30N60P Datasheet (5 Pages)Package Outline Dimension on5 Page
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IXFH30N60P Datasheet PDF (5 Pages)
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IXFH30N60P Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)600 V
Current Rating30.0 A
Case/PackageTO-247-3
Drain to Source Resistance (on) (Rds)240 mΩ
PolarityN-Channel
Power Dissipation500 W
Input Capacitance4.00 nF
Gate Charge82.0 nC
Drain to Source Voltage (Vds)600 V
Breakdown Voltage (Drain to Source)600 V
Continuous Drain Current (Ids)30.0 A
Input Capacitance (Ciss)4000pF @25V(Vds)
Power Dissipation (Max)500W (Tc)
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IXFH30N60P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFH30N60P Documents

IXFH30N60P Datasheet
IXYS Semiconductor
5 Pages / 0.31 MByte

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