| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | N-Channel |
| Power Dissipation | 40 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 9.80 A |
| Rise Time | 51 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Input Power (Max) | 40 W |
| Fall Time | 36 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 9.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
The IRFI640GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
● Isolated package
● 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
● 4.8mm Sink to lead creepage distance
● Dynamic dV/dt rating
● Low thermal resistance
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