TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 8.00 A |
Case/Package | TO-252-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 150 mΩ |
Polarity | N-Channel |
Power Dissipation | 20 W |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 8.00 A |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 520pF @10V(Vds) |
Input Power (Max) | 20 W |
Fall Time | 20 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 20W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 5.5 mm |
Size-Height | 2.3 mm |
Operating Temperature | 150℃ (TJ) |
10V Drive Nch MOSFET Silicon N-channel MOSFET Features Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Low-voltage drive. Easily designed drive circuits. Easy to use in parallel.
ROHM Semiconductor
5 Pages / 0.08 MByte
ROHM Semiconductor
5 Pages / 0.08 MByte
ROHM Semiconductor
4 Pages / 0.12 MByte
ROHM Semiconductor
1 Pages / 0.14 MByte
ROHM Semiconductor
N-channel MOSFET, small switching (60V/8A)
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