| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-723 |
| Polarity | NPN |
| Power Dissipation | 0.15 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 50 @10mA, 5V |
| Input Power (Max) | 150 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN RN1102MFV,L3F digital transistor from Toshiba is your solution. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@10mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. Its maximum power dissipation is 150 mW. It has a maximum collector emitter voltage of 50 V. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
Toshiba
8 Pages / 0.83 MByte
Toshiba
78 Pages / 2.54 MByte
Toshiba
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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