| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Dissipation | 200 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 90 @100mA, 1V |
| Input Power (Max) | 200 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 300 MHz |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Thanks to Toshiba, easily integrate NPN RN1427TE85LF digital transistors into digital signal processing circuits. This product"s maximum continuous DC collector current is 800 mA, while its minimum DC current gain is 90@100mA@1 V. It has a maximum collector emitter saturation voltage of 0.25@2mA@50mA|0.25@1mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Toshiba
8 Pages / 0.54 MByte
Toshiba
8 Pages / 0.53 MByte
Toshiba
Trans Digital BJT NPN 50V 800mA 200mW 3Pin S-Mini T/R
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