| TYPE | DESCRIPTION |
|---|
| Case/Package | SMV |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Including two devices in SMV (super mini type with 5 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN2501~RN2506 APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Toshiba
7 Pages / 0.45 MByte
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