| TYPE | DESCRIPTION |
|---|
| Case/Package | US-6 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Including two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN2901 to RN2906 APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Toshiba
7 Pages / 0.26 MByte
Toshiba
7 Pages / 0.46 MByte
Toshiba
7 Pages / 0.25 MByte
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