| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | S-Mini |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 200 MHz |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
Silicon PNP Epitaxial Type (PCT Process)
●Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
●With built-in bias resistors
●Simplify circuit design
●Reduce a quantity of parts and manufacturing process
●Complementary to RN1401~1406
Toshiba
8 Pages / 0.87 MByte
Toshiba
8 Pages / 0.88 MByte
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