| TYPE | DESCRIPTION |
|---|
| Case/Package | US-6 |
| Polarity | NPN+PNP |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) • Includeing two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
Toshiba
6 Pages / 0.26 MByte
Toshiba
6 Pages / 0.25 MByte
Toshiba
6 Pages / 0.15 MByte
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