| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | ES-6 |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 80 @10mA, 5V |
| Input Power (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Toshiba
6 Pages / 0.28 MByte
Toshiba
Transistor Silicon NPN-PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Toshiba
Trans Npn/Pnp Prebias 0.1W(1/10W) Es6
Toshiba
Trans Digital BJT NPN/PNP 50V 100mA 6Pin US T/R
Toshiba
TRANS NPN/PNP PREBIAS 0.2W US6
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