| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.022 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 12 V |
| Breakdown Voltage (Drain to Source) | 12 V |
| Continuous Drain Current (Ids) | 4A |
| Rise Time | 70 ns |
| Input Capacitance (Ciss) | 2350pF @6V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 210 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.6 mm |
| Size-Height | 0.85 mm |
| Operating Temperature | 150℃ (TJ) |
The RZR040P01TL is a P-channel middle Power MOSFET offers -12V drain source voltage and ±4A continuous drain current. It is suitable for use in switching applications.
● Low ON-resistance
● High power package
● 1.5V Low drive voltage
ROHM Semiconductor
2 Pages / 0.22 MByte
ROHM Semiconductor
14 Pages / 2.62 MByte
ROHM Semiconductor
TSMT3/SOT-346T P -12V -4A 0.055Ω
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