64 Megabit, 32 Megabit 3.0, Volt-only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
●General Description
●The S29GLxxxA family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64 Mb, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32 Mb, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.
●Distinctive Characteristics
●Architectural Advantages
●■ Single power supply operation
● — 3 volt read, erase, and program operations
●■ Manufactured on 200 nm MirrorBit process technology
●■ Secured Silicon Sector region
● — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
● — May be programmed and locked at the factory or by the customer
●■ Flexible sector architecture
● — 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
● — 64Mb (boot sector models): 127 32 Kword (64 KB) sectors + 8 4Kword (8KB) boot sectors
● — 32Mb (uniform sector models): 64 32Kword (64KB) sectors
● — 32Mb (boot sector models): 63 32Kword (64KB) sectors + 8 4Kword (8KB) boot sectors
●■ Compatibility with JEDEC standards
●— Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
●■ 100,000 erase cycles typical per sector
●■ 20-year data retention typical
●Performance Characteristics
●■ High performance
● — 90 ns access time
● — 4-word/8-byte page read buffer
● — 25 ns page read times
● — 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
●■ Low power consumption (typical values at 3.0 V, 5MHz)
● — 18 mA typical active read current
● — 50 mA typical erase/program current
● — 1 µA typical standby mode current
●■ Package options
● — 48-pin TSOP
● — 56-pin TSOP
● — 64-ball Fortified BGA
● — 48-ball fine-pitch BGA
●Software & Hardware Features
●■ Software features
● — Program Suspend & Resume: read other sectors before programming operation is completed
● — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
● — Data# polling & toggle bits provide status
● — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
● — Unlock Bypass Program command reduces overall multiple-word programming time
●■ Hardware features
● — Sector Group Protection: hardware-level method of preventing write operations within a sector group
● — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
● — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
● — Hardware reset input (RESET#) resets device
● — Ready/Busy# output (RY/BY#) detects program or erase cycle completion
