| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SC-70-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 200 mW |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 @2mA, 5V |
| Input Power (Max) | 150 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The versatility of this NPN SBC846BWT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.
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