TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 6 Pin |
Case/Package | SC-70-6 |
Halogen Free Status | Halogen Free |
Number of Positions | 6 Position |
Polarity | NPN |
Power Dissipation | 380 mW |
Gain Bandwidth Product | 100 MHz |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.1A |
hFE Min | 200 @2mA, 5V |
hFE Max | 450 @2mA, 5V |
Input Power (Max) | 380 mW |
DC Current Gain (hFE) | 200 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 380 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN SBC847BDW1T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 380 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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