| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 50 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | PNP |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 1.5A |
| hFE Min | 40 @150mA, 2V |
| Input Power (Max) | 1.5 W |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
This PNP SBCP53T1G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
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