| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.08 Ω |
| Polarity | N-Channel |
| Power Dissipation | 179 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 1200 V |
| Rise Time | 36 ns |
| Input Capacitance (Ciss) | 2080pF @800V(Vds) |
| Input Power (Max) | 179 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 262W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 20.95 mm |
| Size-Height | 5.03 mm |
| Operating Temperature | 175℃ (TJ) |
The SCT2080KEC is a N-channel SiC (Silicon Carbide) Power MOSFET with high voltage resistance, low ON resistance and fast switching speed.
● Fast Reverse Recovery
● Easy to Parallel
ROHM Semiconductor
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ROHM Semiconductor
ROHM SCT2080KEC Power MOSFET, N Channel, 35A, 1.2kV, 0.08Ω, 18V, 4V
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