| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 215 mΩ |
| Power Dissipation | 175 W |
| Threshold Voltage | 2 V |
| Input Capacitance | 650 pF |
| Drain to Source Voltage (Vds) | 1200 V |
| Breakdown Voltage (Drain to Source) | 1.2 kV |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 650pF @400V(Vds) |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 175W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
●Key Features
● Very tight variation of on-resistance vs. temperature
● Slight variation of switching losses vs. temperature
● Very high operating temperature capability (200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
● Easy to drive
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