| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.28 Ω |
| Polarity | N-Channel |
| Power Dissipation | 108 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 1200 V |
| Continuous Drain Current (Ids) | 14A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 667pF @800V(Vds) |
| Input Power (Max) | 108 W |
| Fall Time | 29 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 108W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 20.95 mm |
| Size-Width | 15.9 mm |
| Size-Height | 5.03 mm |
| Operating Temperature | 175℃ (TJ) |
The SCT2280KEC is a 1200V N-channel Silicon Power MOSFET with fast switching speed and low on resistance. Suitable for solar inverters, DC/DC converters, SMPS, induction heating and motor drives.
● Fast reverse recovery
● Easy to parallel
● Simple drive requirement
ROHM Semiconductor
14 Pages / 0.88 MByte
ROHM Semiconductor
15 Pages / 1.02 MByte
ROHM Semiconductor
41 Pages / 0.88 MByte
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