| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.08 Ω |
| Polarity | N-Channel |
| Power Dissipation | 270 W |
| Threshold Voltage | 2.6 V |
| Input Capacitance | 1700 pF |
| Drain to Source Voltage (Vds) | 1200 V |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 1700pF @400V(Vds) |
| Input Power (Max) | 270 W |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 270W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.
● Very tight variation of on-resistance vs. temperature
● Slight variation of switching losses vs. temperature
● Very high operating temperature capability (200°C)
● Very fast and robust intrinsic body diode
● Low capacitance
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