| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
Infineon
12 Pages / 0.36 MByte
Infineon
Trans IGBT Chip N-CH 600V 21A 3Pin (3+Tab) TO-220AB
Fairchild
Trans IGBT Chip N-CH 600V 16A 75000mW 3Pin(3+Tab) TO-220 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 16A 75000mW 3Pin(3+Tab) TO-220 Tube
Infineon
Trans IGBT Chip N-CH 600V 20A 3Pin TO-220 Tube
Infineon
Trans IGBT Chip N-CH 600V 20A 3Pin(3+Tab) TO-220
Fairchild
Fairchild"s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
Samsung
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN
Infineon
Trans IGBT Chip N-CH 600V 20A 3Pin(3+Tab) TO-220
ON Semiconductor
Insulated Gate Bipolar Transistor
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