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SI2318DS-T1-E3/BKN
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SI2318DS-T1-E3/BKN Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:TO-236
Description:N-CHANNEL 40V (D-S) MOSFET
Documentation:SI2318DS-T1-E3/BKN Datasheet (5 Pages)Part Numbering System on1 Page
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SI2318DS-T1-E3/BKN Datasheet PDF (5 Pages)
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SI2318DS-T1-E3/BKN Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-236
Drain to Source Resistance (on) (Rds)0.058 Ω
Power Dissipation1.25 W
Input Capacitance540pF @20V
Drain to Source Voltage (Vds)40 V
Breakdown Voltage (Drain to Source)40 V
Thermal Resistance100℃/W (RθJA)
Fall Time25 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
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SI2318DS-T1-E3/BKN Size & Package

TYPEDESCRIPTION
Size-Length3.04 mm
Size-Height1.02 mm
Operating Temperature-55℃ ~ 150℃
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SI2318DS-T1-E3/BKN Documents

SI2318DS-T1-E3/BKN Datasheet
Vishay Semiconductor
5 Pages / 0.06 MByte

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