TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.195 Ω |
Polarity | N-Channel |
Power Dissipation | 1.25 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 1.15 A |
Rise Time | 11 ns |
Fall Time | 10 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.25 W |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.02 mm |
Operating Temperature | -55℃ ~ 150℃ |
The SI2328DS-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
● 100% Rg tested
● 100% UIS tested
● Halogen-free
● -55 to 150°C Operating temperature range
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