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SI3473DDV-T1-GE3
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SI3473DDV-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:VISHAY
Case Package:TSOP
Description:P-Channel 12 V (D-S) MOSFET
Documentation:SI3473DDV-T1-GE3 Datasheet (11 Pages)
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SI3473DDV-T1-GE3 Specifications

TYPEDESCRIPTION
Number of Pins6 Pin
Case/PackageTSOP
Number of Positions6 Position
Drain to Source Resistance (on) (Rds)0.0145 Ω
Power Dissipation3.6 W
Rise Time28 ns
Input Capacitance (Ciss)1975pF @6V(Vds)
Fall Time35 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2000 mW
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SI3473DDV-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
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SI3473DDV-T1-GE3 Documents

SI3473DDV-T1-GE3 Datasheet
VISHAY
11 Pages / 0.24 MByte
SI3473DDV-T1-GE3 Other Datasheet PDF
VISHAY
11 Pages / 0.24 MByte

SI3473DDVT1 Documents

SI3473DDV-T1-GE3 Datasheet PDF
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P-Channel 12 V (D-S) MOSFET
SI3473DDV-T1-GE3 Datasheet PDF
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MOSFET P-CHANNEL 12V 8A 6TSOP
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