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SI4599DY-T1-GE3
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SI4599DY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:VISHAY
Category:MOSFETs
Case Package:SOIC-8
Description:SOIC-8 N+P 40V 5.6A 29.5mΩ,37mΩ
Documentation:SI4599DY-T1-GE3 Datasheet (15 Pages)Package Outline Dimension on12 Page13 Page
Part Numbering System on1 Page
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SI4599DY-T1-GE3 Datasheet PDF (15 Pages)
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SI4599DY-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSOIC-8
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.0295 Ω
PolarityN-Channel, P-Channel
Power Dissipation2 W
Threshold Voltage1.4 V
Drain to Source Voltage (Vds)40 V
Continuous Drain Current (Ids)5.6A
Input Capacitance (Ciss)640pF @20V(Vds)
Input Power (Max)3W, 3.1W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)3 W
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SI4599DY-T1-GE3 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length5 mm
Size-Width4 mm
Size-Height1.55 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity2500
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SI4599DY-T1-GE3 Documents

SI4599DY-T1-GE3 Datasheet
VISHAY
15 Pages / 0.3 MByte
SI4599DY-T1-GE3 Other Datasheet PDF
VISHAY
16 Pages / 0.3 MByte

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