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SI7850DP-T1-GE3
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SI7850DP-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOIC
Description:VISHAY SI7850DP-T1-GE3 MOSFET Transistor, N Channel, 10.3A, 60V, 31mohm, 20V, 3V
Documentation:SI7850DP-T1-GE3 Datasheet (11 Pages)Package Outline Dimension on5 Page6 Page7 Page
Part Numbering System on1 Page
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SI7850DP-T1-GE3 Datasheet PDF (11 Pages)
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SI7850DP-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSOIC
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.031 Ω
PolarityN-Channel
Power Dissipation1.8 W
Threshold Voltage3 V
Drain to Source Voltage (Vds)60 V
Continuous Drain Current (Ids)10.3 A
Rise Time10 ns
Fall Time12 ns
Operating Temperature (Max)150 ℃
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SI7850DP-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃
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SI7850DP-T1-GE3 Documents

SI7850DP-T1-GE3 Datasheet
Vishay Semiconductor
11 Pages / 0.3 MByte
SI7850DP-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
11 Pages / 0.3 MByte

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