| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PowerPAKSO-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 10.3 A |
| Rise Time | 10 ns |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.8 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Cut Tape (CT) |
| Size-Length | 4.9 mm |
| Size-Width | 5.89 mm |
| Size-Height | 1.04 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SI7850DP-T1-E3 is a 60V N-channel fast switching TrenchFET® Power MOSFET with low thermal resistance and low 1.07mm profile. Suitable for secondary synchronous rectifier and primary side switch for 24VDC/DC applications.
● ±20V Gate-source voltage
● Halogen-free
Vishay Semiconductor
11 Pages / 0.3 MByte
Vishay Semiconductor
11 Pages / 0.3 MByte
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