| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOIC |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.024 Ω |
| Polarity | N-CH |
| Power Dissipation | 1.5 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 6.2A |
| Operating Temperature (Max) | 150 ℃ |
The SI9410BDY is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
● -55 to 150°C Operating temperature range
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